This is a data series that
follows new designs from
commencement through
placement into production. It
also tracks IP. Selantek
attempts to capture
all designs worldwide. The
total number of design starts,
active designs,
design completions and
designs in production are
cross-checked against wafer
start data obtained
independently, EDA sales,
royalties and licensing
agreements, Intellectual
Property sales, royalties and
licensing agreements and
financial statements, press
releases, conference
proceedings and industry
association data. A separate
report estimates the
worldwide total of designs
currently in production, thus
enabling a complete analysis
of the worldwide status of
semiconductor activity by
design.
Active designs Q-2 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). Semiconductor Category: Discrete Power, Sensors, Standard Linear, Linear ASIC, Linear ASSP, MPU, MCU, DSP, Standard Logic, Special Logic/ASSP, Memory. See sample for sub-categories.
Active Designs by Category in 2008
N/A
$2,995.00
Active designs Q-1 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). Semiconductor Category: Discrete Power, Sensors, Standard Linear, Linear ASIC, Linear ASSP, MPU, MCU, DSP, Standard Logic, Special Logic/ASSP, Memory. See sample for sub-categories.
Active Designs by Category 2009 Q-1
N/A
$1,995.00
Active designs Q-1 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). Semiconductor Category: Discrete Power, Sensors, Standard Linear, Linear ASIC, Linear ASSP, MPU, MCU, DSP, Standard Logic, Special Logic/ASSP, Memory. See sample for sub-categories.
DSP
N/A
$1,025.00
DSP by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Each sub-category is tabulated by Technology Node and by Region and by Application. Active Designs by Application 2008 Database & Report. Active designs By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
Memory 2008
N/A
$1,025.00
MEMORY by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: DRAM, SRAM, NAND Flash, NOR Flash, EPROM, EEPROM, NVSRAM, FRAM. Each sub-category is tabulated by Technology Node and by Region and by Application. Active Designs by Application 2008 Database & Report. Active designs. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
LOGIC 2008
N/A
$1,025.00
LOGIC. Standard Logic, Display Drivers, FPGA, Gate Arrays. by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: General Purpose Logic, Display Drivers, FPGA, Gate Arrays. Each sub-category is tabulated by Technology Node and by Region and by Application. Active Designs by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ANALOG
N/A
$1,025.00
ANALOG by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: Amplifier, Comparator, Voltage Regulators, Data Conversion, Interface. Each sub-category is tabulated by Technology Node and by Region and by Application. Active Designs by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
DISCRETE 2008
N/A
$0.00
DISCRETE by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: Diode, Small Signal Transistors, Power Transistors, Rectifiers, Thyristors. Each sub-category is tabulated by Technology Node and by Region and by Application. Active Designs by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
EDA-15
Active Designs by end Market (Applications) 2008 Database & Report
Active Designs by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
EDA-16
Active Designs by Category 2009 Quarterly (4) Database & Report
Active Designs by End Market (Applications) 2009 by Quarter Database & Report. Active Designs by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
EDA-18
Active Designs by End Market (Applications) 2009 Q-1 Database & Report
Active Designs by End Market 2009 Q-1 Database & Report. Active Designs by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Semiconductor Category. Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
EDA-19
Microcontroller 2008 Database
N/A
$1,025.00
Microcontroller by Technology Node and Application (Short List)
Annual Subscription. Database only. Limited Inquiry Privileges.
CONTENTS:
Sub-Categories: 8-Bit, 16-Bit, 32-Bit, 64-Bit. Each sub-category is tabulated by Technology Node and by Region and by Application.
Active Designs by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
2008 Analog ASSP Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by teh above categories.
ASSP-A2
ASSP Analog 2009 Q-1 Design Starts
N/A
$3,995.00
2009 Q-1 Analog ASSP Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by the above categories.
ASSP-A3
ASSP Analog 2008 Design Completions
N/A
$3,995.00
2008 Analog ASSP Design Completions. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by the above categories.
ASSP-A4
ASSP Analog 2009 Q-1 Design Completions
N/A
$3,995.00
2009 Q-1 Analog ASSP Design Completions. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by the above categories.
ASSP-A5
ASSP Analog 2008 Active Designs
N/A
$3,995.00
2008 Analog ASSP Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by the above categories.
ASSP-A6
ASSP Analog 2009 Q-1 Active Designs
N/A
$3,995.00
2009 Q-1 Analog ASSP Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by the above categories.
ASIC Analog & Digital Design Completions 2008. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
EDA-3
ASIC Analog & Digital Design Starts 2008
N/A
$3,995.00
Analog & Digital ASIC Design Starts 2008. Designs by Application 2008 Database & Report. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
2009 Q-1 Analog & Digital ASIC Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by teh above categories.
EDA-6
ASIC Analog & Digital Active Designs 2008
N/A
$3,995.00
2008 Analog & Digital ASIC Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by teh above categories.
2009 Q-1 Analog & Digital ASIC Design Completions. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. There are separate tables for Analog ASIC and for Digital ASIC, each sub-divided by teh above categories.
EDA-8
ASIC Analog & Digital Design Starts 2009 Q-1
N/A
$1,995.00
Analog & Digital ASIC Design Starts 2009 Q-1 By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
Microcontroller by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: 8-Bit, 16-Bit, 32-Bit, 64-Bit. Each sub-category is tabulated by Technology Node and by Region and by Application. Design Completioins by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
DSP
N/A
$1,025.00
DSP by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: by Technology Node and by Region and by Application. Design Completions by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
MEMORY
N/A
$1,025.00
MEMORY by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: DRAM, SRAM, NOR Flash, NAND Flash, EPROM, EEPROM, NVSRAM, FRAM. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGN COMPLETIONS by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
LOGIC 2008
N/A
$1,025.00
LOGIC by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: GENERAL PURPOSE LOGIC, GATE ARRAYS, FPGA, DISPLAY DRIVERS. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGN COMPLETIONS by Application 2008 Database & Report. Active designs Q-1 2009. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ANALOG 2008
N/A
$1,025.00
ANALOG by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: AMPLIFIER, DATA CONVERSION, VOLTAGE REGULATOR, INTERFACE, COMPARATOR. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGN COMPLETIONS by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
DISCRETE 2008
N/A
$1,025.00
DISCRETE by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: DIODE, POWER TRANSISTORS, SMALL SIGNAL TRANSISTORS, THYRISTORS, RECTIFIERS. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGN COMPLETIONS by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
2008 DISCRETE Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. Each of the above Categories will be shown by the following DISCRETE categories: DIODES, SMALL SIGNAL TRANSISTORS, POWER TRANSISTORS, THYRISTORS, RECTIFIERS.
DS-2
ANALOG Design Starts 2008
N/A
$2,995.00
2008 ANALOG Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. Each of the above Categories will be shown by the following ANALOG categories: AMPLIFIER, DATA CONVERSION, VOLTAGE REGULATORS, COMPARATOR, INTERFACE.
DS-3
LOGIC Design Starts 2008
N/A
$2,995.00
2008 LOGIC Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. Each of the above Categories will be shown by the following LOGIC categories: GENERAL PURPOSE LOGIC, GATE ARRAYS, FPGA, DISPLAY DRIVERS.
DS-4
MEMORY Design Starts 2008
N/A
$2,995.00
2008 MEMORY Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. Each of the above Categories will be shown by the following MEMORY categories: DRAM, SRAM, NOR FLASH, NAND FLASH, EPROM, EEPROM
DS-5
MICROCONTROLLER Design Starts 2008
N/A
$2,995.00
2008 MICROCONTROLLER Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. Each of the above Categories will be shown by the following MICROCONTROLLER categories: 8-Bit; 16-Bit; 32-Bit; 64-Bit.
DS-6
DSP Design Starts 2008
N/A
$2,995.00
2008 DSP Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
MICROCONTROLLER Designs in Production by Technology Node by End Market
N/A
$2,075.00
Microcontroller by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: 8-Bit, 16-Bit, 32-Bit, 64-Bit. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
ANALOG Designs in Production by Technology Node and Semiconductor Category
N/A
$2,075.00
ANALOG by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: AMPLIFIER, DATA CONVERSION, INTERFACE, VOLTAGE REGULATORS, COMPARATORS. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
LOGIC Designs in Production by Technology Node and Region
N/A
$2,075.00
LOGIC by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: GENERAL PURPOSE LOGIC, DISPLAY DRIVERS, GATE ARRAYS, FPGA. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
MEMORY Designs in Production
N/A
$2,075.00
MEMORY by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: DRAM, SRAM, NOR FLASH, NAND FLASH, EPROM, EEPROM. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
DSP Designs in Production
N/A
$2,075.00
DSP by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: NONE. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
DISCRETE Designs in Production
N/A
$2,075.00
DISCRETE by Technology Node and Application (Short List) Annual Subscription. Database only. Limited Inquiry Privileges. CONTENTS: Sub-Categories: DIODE, THYRISTOR, SMALL SIGNAL TRANSISTORS, POWER TRANSISTORS, RECTIFIERS. Each sub-category is tabulated by Technology Node and by Region and by Application. DESIGNS IN PRODUCTION by Application 2008 Database & Report. By Technology and Region and by Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications: Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace. devices (units) Sold by Technology Node and Application. On teh horizontal (X) axis iare technology nodes. Under each technology node are the geographic regions. In the Vertical (Y) axis are designs currently in production with a minimum of 10,000 devices sold annually followed by the total number of devices (Units, Dollars and ASP). This is repeated for each Sub-Category.
2008 ASSP Digital Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ASSP-D2
ASSP Digital 2009 Q-1 Design Starts
N/A
$2,995.00
2009 Q-1 ASSP Digital Design Starts. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ASSP-D3
ASSP-Digital 2008 Design Completions
N/A
$2,995.00
2008 ASSP Digital Design Completions. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ASSP-D4
ASSP Digital 2009 Q-1 Design Completions
N/A
$2,995.00
2009 Q-1 Design Completions. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ASSP-D5
ASSP Digital 2008 Active Designs
N/A
$2,995.00
2008 ASSP Digital Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.
ASSP-D6
ASSP Digital 2009 Q-1 Active Designs
N/A
$2,995.00
2009 Q-1 ASSP Digital Active Designs. By Technology and Region and by End Market (Application). Technology and Technology Node: CMOS: 28nm, 32nm, 45nm, 55nm, 65nm, 80nm, 90nm, 110nm, 130nm, 150nm, 180nm, 0.25μ, ≥0.35μ;SiGe: 130nm, 180nm, 0.25μ, 0.35μ. GaAs: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; BiCMOS: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ; Bipolar: ≤0.25μ, 0.35μ, 0.5μ, ≥1.0μ. Region: Americas, Europe, E. Europe, China, Japan, Asia, India. MEA (Middle East + Africa). End Applications (partial list - see Sample for current list): Automotive, Computer, Wired Communications, Wireless Communications, Consumer, Industrial, Instrumentation, Medical, Navigation, Defense and Aerospace.